Короткий опис(реферат):
Relevance. The development of materials with excellent dielectric properties is crucial for modern
telecommunications. The value of this study lies in the importance of examining these properties in the context
of expanding possibilities for high-frequency applications in modern telecommunication technologies, including
4G and 5G communication.
Purpose. The purpose of this study is to investigate the crystal structure of the compound BaMnV2O7 and its
dielectric properties.
Methodology. To achieve the set purpose, methods of analysis, experimentation, comparison, and computer
modelling were used. Within this study, the material of low-temperature co-fired ceramics (LTCC) was
thoroughly examined, known for its high efficiency as moisture protection.
Results. A structural model for the compound BaMnV2O7 was proposed and investigated. In particular, it was
found that the radius of Mn2+ (0.75 Å) is almost identical to the radius of Zn2+ (0.68 Å), confirming the
similarity of the crystal structures of BaMnV2O7 and BaZnV2O7. The main results showed that pyrovanadate has
a monoclinic symmetry and has a spatial symmetry group P121/c1 (14), characterised by lattice parameters:
a = 5.6221(5) Å, b = 15.271(1) Å, c = 9.7109(8) Å, β = 123.702(3)°. The divergence factor was 9.05, indicating
the model’s correspondence to experimental data. Additionally, the density of the compound was calculated,
amounting to 4.2699 g/cm3.
Conclusions. Experimental data confirmed the presence of interatomic distances within 1.33-3.47 Å. The
minimum interatomic distance in the compound structure is 1.33 Å between oxygen (O5) and vanadium (V2)
atoms. The maximum interatomic distance is 3.47 Å observed between oxygen (O1) and (O2) atoms. With
characteristics such as low dielectric permittivity (εr~8.9) and a high quality factor coefficient (Qu×f 31362
GHz), the compound BaMnV2O7 exhibits excellent microwave dielectric properties. The practical value of the
obtained results lies in the potential development and improvement of materials with high dielectric properties,
such as BaMnV2O7, for their application in telecommunication technologies, contributing to the development of
more compact and reliable components for electronics
